INTRODUCTION TO THE PROJECT

The project given was titled "modelling  electrical properties of thin high k-gate stacks(HfSiO,50% Hf)". the length of this project was 5 weeks.
 The aim of this project is to determine the electrical properties of the thin high -k gate stacks when the the surface of the oxidized silicon ,  that is the dielectric normally used is replaced by another type of dielectric material. The dielectric materials  used in this project was HfSiO consisting of  50% of  Hf.


This project was carried out by  group 3 of year 2  EEE students, members of the projects are Obiora Felix, Ashley luff and Kizilay Aybars, and the supervisor was Dr. Mitrovic